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| TetraFET D1004UK METAL GATE RF SILICON FET MECHANICAL DATA C D (2 pls) E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W - 28V - 175MHz SINGLE ENDED FEATURES * SIMPLIFIED AMPLIFIER DESIGN H I F M K J N * SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE DT PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN DIM A B C D E F G H I J K M N mm 6.35 DIA 3.17 DIA 18.41 5.46 5.21 7.62 21.59 3.94 12.70 0.13 24.76 2.59 4.06 Tol. 0.13 0.13 0.25 0.13 0.13 MAX 0.38 0.13 0.13 0.03 0.13 0.13 0.25 Inches 0.250 DIA 0.125 DIA 0.725 0.215 0.205 0.300 0.850 0.155 0.500 0.005 0.975 0.102 0.160 Tol. 0.005 0.005 0.010 0.005 0.005 MAX 0.015 0.005 0.005 0.001 0.005 0.005 0.010 GATE SOURCE (COMMON) * HIGH GAIN - 16 dB MINIMUM APPLICATIONS * HF/VHF COMMUNICATIONS from 1 MHz to 175 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 175W 70V 20V 20A -65 to 150C 200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 D1004UK ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 80W VDS = 28V f = 175MHz VDS = 28V VDS = 28V VDS = 28V VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.4A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 4A 1 3.2 16 50 20:1 70 Typ. Max. Unit V 4 1 7 mA A V S dB % -- 240 120 10 pF pF pF VGS(th) Gate Threshold Voltage * VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 1.0C / W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 D1004UK 150 125 100 P out 80 70 60 Efficiency 150 125 100 P out 22 20 18 Gain 75 W 50 50 25 0 VDS = 28V IDQ = 0.4A f = 175MHz % 75 W 16 dB 40 30 20 50 25 0 0 VDS = 28V IDQ = 0.4A f = 175MHz 14 12 10 0 1 2 3 4 P in W 5 6 7 8 1 2 3 4 P in W 5 6 Pout Gain 7 8 Pout Drain Efficiency Figure 1 - Power Output and Efficiency vs. Power Input. -20 Figure 2 - Power Output & Gain vs. Power Input. -25 D1004UK OPTIMUM SOURCE AND LOAD IMPEDANCE VDS = 28V f1 = 175.0MHz f2 = 175.1MHz IDQ = 0.4A IMD dBc -30 -35 -40 -45 Frequency MHz 175MHz 90 ZS ZL 2.2 + j1.9 3.2 - j0.5 10 20 30 40 50 60 70 IMD3 80 P out W PEP Figure 3 - IMD vs. Output Power. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 D1004UK 12 +28V Gate-Bias 10k L4 100nF 10nF 8 x5 mm contact pad L3 5.1nF T3 L2 T2 1-70pF 8 x5 mm contact pad 1-70pF 22F 10k 5.1nF 1-70pF T1 1-70pF L1 D1004K D1004UK 175MHz TEST FIXTURE Substrate 1.6mm PTFE/ glass, Er= 2.5 All microstrip lines W=4.4mm T1 T2 T3 7.5mm 6mm 8mm L1 L2 L3 L4 Hairpin loop 16swg 13mm dia Hairpin loop 16swg 11mm dia 10 turns 18swg enamelled copper wire, 4mm i.d. 12 turns 18swg enamelled copper wire on 22.7mm o.d. ferrite core Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk Prelim. 6/99 |
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